无压力辅助硅/玻璃激光局部键合  

Pressure-Free Localized Laser Bonding for Silicon and Glass

作　　者：马子文[1] 汤自荣[1] 廖广兰[1] 史铁林[1] 聂磊[1] 

机构地区：[1]华中科技大学机械科学与工程学院武汉光电国家实验室,武汉430074

出　　处：《Journal of Semiconductors》2007年第2期217-221,共5页半导体学报（英文版）

基　　金：国家重大基础研究发展规划(批准号:2003CB716207);国家自然科学基金(批准号:50405033)资助项目~~

摘　　要：提出了一种新的无需外压力作用的硅/玻璃激光局部键合方法,通过对晶圆进行表面活化处理,选择合适的激光参数及加工环境,成功地实现了无压力辅助硅/玻璃激光键合.同时研究了该键合工艺参数如激光功率、激光扫描速度、底板材料等的影响.实验表明,激光功率越大,扫描速度越小,键合线的宽度就越大.实验结果显示,该方法能有效减少键合片的残余应力,控制键合线宽,并能得到较好的键合强度.该工艺可为MEMS器件的封装与制造提供简洁、快速、键合区可选择的新型键合方法.A novel pressure-free localized laser bonding process for silicon and glass has been developed. This process has been successfully realized by applying surface activation to wafers and selecting suitable laser parameters and bonding conditions. The effects of factors in this bonding method ,such as laser power, scanning velocity, and base material, were also studied. The experimental results demonstrate that the bondline becomes wider at higher laser powers and smaller scanning velocities. The experiment also shows that this bond process can efficiently reduce residual stress in bonded pairs and control the bondline width. Tensile experiments indicate that the bond strength is comparable with that obtained by other bonding methods. This process can provide a simple and robust bonding method with rapid processing time and high selectivity of bonding area for the packaging and fabrication of MEMS devices.

关 键 词：MEMS 激光键合 表面活化 键合线宽 

分 类 号：TN405[电子电信—微电子学与固体电子学]