Co／Si和Co／SiO_2界面反应的观察  

Observation of Co/Si and Co/SiO_2 Interfacial Reaction

作　　者：张灶利[1] 翟启华[1] 纪箴[1] 肖治纲[1] 杜国维[1] 

机构地区：[1]北京科技大学材料物理系

出　　处：《Journal of Semiconductors》1996年第4期265-268,共4页半导体学报（英文版）

摘　　要：本文用Ｘ射线衍射（ＸＲＤ）和高分辨电镜研究Ｃｏ薄膜在氩气气氛或真空条件下热处理时Ｃｏ／Ｓｉ和Ｃｏ／ＳｉＯ２体系的界面反应．结果表明：在氩气氛下４５０℃处理时，Ｃｏ薄膜均发生氧化，在Ｃｏ／Ｓｉ界面同时有硅化物形成，而在Ｃｏ／ＳｉＯ２界面，无硅化物产生．在真空条件下５００℃处理１小时，薄膜没有氧化，在Ｃｏ／Ｓｉ界面形成完整的ＣｏＳｉ２外延层．Abstract We have investigated the Co/Si and Co/SiO2 interface reaction of the vaccum or Ar-annealed Co films using XRD and HREM techniques. The results showed that annealed at 450℃ under Ar ambient Co film was oxidized and silicide was observed at Co/Si interface but not at Co/SiO2 interface. Annealed at 50℃ for an hour under the vacuum condition,Co film was not oxidized and perfect epitaxial CoSi2 layer was formed at the Co/ Si interface.

关 键 词：Co/Si Co/SiO2 界面反应 硅化物薄膜 

分 类 号：TN304.21[电子电信—物理电子学]