MOCVD生长大功率单量子阱激光器  

High-Power SQW Lasers by MOCVD Growth

作　　者：郑联喜[1] 肖智博[1] 韩勤[1] 金才政[1] 周帆[1] 马朝华[1] 胡雄伟[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1996年第5期392-395,共4页半导体学报（英文版）

摘　　要：本文介绍了ＭＯＣＶＤ生长的高质量ＧａＡｓ和ＡｌＡｓ材料以及（Ａｌ）ＧａＡｓ／ＡｌＧａＡｓ分别限制单量于阱激光器．ＧａＡｓ材料的７７Ｋ迁移率为１２２，７００ｃｍ２／（Ｖ·ｓ），ＧａＡｓ／ＡｌＡｓ具有均匀陡变的界面．激光器的最大光输出功率为４Ｗ，平均光功率密度达４ＭＷ／ｃｍ２，斜率效率为１．２Ｗ／Ａ，在１Ｗ恒功老化４０００小时电流增加小于１０％，预计寿命可超过两万小时．Abstract High quality GaAs and AlAs thin film materials and high-power GaAs/AlGaAs graded-index separate confinement single quantum well lasers have been grown using metalorganic chemical vapor deposition. 77K mobility of the GaAs thin film is 122, 700 cm2·V-1· s-1. The uniform and sharp GaAs/AlAs interfaces are obtained. For a 100μm wide stripe laser, a CW optical power of 4W has been achieved at room temperature, the output power density is 4MW/cm2 and the slope efficiency is as high as 1. 2W/A. Working current increases by less then 10% after 4000 hours of testing under 1W optical power.

关 键 词：单量子阱激光器 激光器 MOCVD 

分 类 号：TN248[电子电信—物理电子学]