MOCVD生长GaN力学性能研究  

Study on Mechanical Properties of GaN Epitaxy Films Grown on Sapphire by MOCVD

作　　者：魏同波[1] 王军喜[1] 李晋闽[1] 刘喆[1] 段瑞飞[1] 

机构地区：[1]中科院半导体研究所,北京100083

出　　处：《稀有金属材料与工程》2007年第3期416-419,共4页Rare Metal Materials and Engineering

基　　金：国家"863"项目资助(2004AA311040)

摘　　要：采用MOCVD技术在蓝宝石衬底(0001)面上生长了GaN外延膜,利用原子力显微镜AFM、扫描电镜SEM分析了薄膜表面形貌,利用纳米压痕仪和UMT试验机考察了GaN膜的硬度、临界载荷以及摩擦学性能等。结果表明,薄膜以二维模式均匀生长,表面平整,硬度达22.1MPa,弹性模量为299.5GPa,与衬底结合紧密,临界载荷达1.6N,与GCr15钢球对磨时摩擦系数仅为0.13,与Si3N4陶瓷球摩擦时膜很快就磨穿。GaN epitaxy films were grown on （0001） oriented sapphire substrate by metal-organic vapor deposition（MOCVD）. AFM and SEM were used to analyze the surface morphology of GaN films. Hardness and critical load of GaN films were measured by an nano-indentation tester, friction coefficient by reciprocating UMT-2MT tribometer. It is found that the surface of GaN film is smooth and the epitaxial growth mechanism is in two-dimension mode, GaN epitaxy films also belong to ultra-hardness materials, whose hardness is 22.1 MPa and elastic modulus is 299.5 GPa. Adhesion strength of epitaxial GaN to sapphire is high, and critical load reaches 1.6 N. Friction coefficient against GCr15 ball is steadily close to 0.13, while GaN films turns to be broken rapidly by using Si3N4 ceramic ball as counterpart.

关 键 词：GAN MOCVD 形貌 机械性能 

分 类 号：TN304.2[电子电信—物理电子学]