红外吸收光谱法研究磁控溅射沉积SiO_x非晶薄膜的过程  

A Study of Depositing Amorphous SiO_x Films vis Magnetron Sputtering by FTIR Method

作　　者：王申伟[1] 衣立新[1] 苏梦蟾[1] 陈恩光[1] 王永生[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《光谱学与光谱分析》2007年第3期456-459,共4页Spectroscopy and Spectral Analysis

基　　金：国家"973"计划(2003CB314707);国家自然科学基金(60577022;10434030);教育部留学回国人员基金项目(2005383);北京交通大学科技基金项目(LI2005J0070;2003RC058)资助

摘　　要：利用磁控溅射技术,在单晶Si衬底上生长了SiOx非晶薄膜。傅里叶变换红外吸收光谱(FTIR)显示,SiOx非晶薄膜存在3个吸收谱带。研究发现,随着溅射功率的提高,薄膜中先后形成Si-Oy-Si4-y(0<y≤4),Si6环以及无桥氧空位中心(NBOHC)缺陷等结构,这几种结构对应的Si—O—Si键的伸缩振动吸收、非对称伸缩振动吸收以及O—Si—O键的振动吸收是导致薄膜的FTIR光谱出现3个吸收谱带的根本原因。Amorohous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors＇ investigation shows that Si-Oy-Sh-y （0〈y≤4）, Sis rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing.The appearance of the three absorption bands was due to the stretching and asymmetric stretching vibration of Si-O-Si bond and the vibration of O-Si-O bond corresponding to the above mentioned structures in the SiOx films.

关 键 词：SIOX 非晶薄膜 磁控溅射 红外吸收光谱 

分 类 号：O472.3[理学—半导体物理]