GaAs材料中EPR“As_(Ga)”缺陷的本性  

Origin of the EPR "As_(Ga)" Defect in GaAs

作　　者：汪光裕[1] 冯平义[1] 邹元爔 曾繁安[2] 

机构地区：[1]中国科学院上海冶金所 [2]中国科学院原子核所

出　　处：《电子学报》1989年第1期68-72,共5页Acta Electronica Sinica

摘　　要：本文根据EPR基本理论和量子化学的一些计算结果,并对照中子辐照GaAs样品中EPR“As_(Ga)”谱线形状随退火温度变化的实验结果,认为为了揭示EPR“As_(Ga)”缺陷本性必须考虑包括As_(Ga)周围多层配位原子在内的基体磁性核对于未成对电子的超精细(hf)相互作用。更进一步,本文还讨论了空位对EPR“As_(Ga)”谱线宽度和一级hf常数等影响,从而首次明确指出GaAs中EPR“As_(Ga)”可鉴别为As_(Ga)及其有关空位络合物。In order to shed more light on the nature of EL2 defect in GaAs, this paper has investigated the EPR'AsGa' spactra in detail on the basis of EPR theory and quantum chemistry. The results show that the higher-order hyperfine interactions arisen from the multi -shell As and Ga nuclei around the AsGa antisite should be taken into account.Furthermore, combined with the annealing experimens of the neutron irradiated GaAs by Goltzene et al. in 1984, the effects of a vacancy (or vacancies) around the AsGa antisite on the linewidth and the hf constant of the EPR'AsGa'spectrum are discussed. In consequence, We suggest that the EPR'AsGa'might be caused not only by the isolated AsGa but also by some of its vacancy complexes.

关 键 词：GAAS ASGA EPR 缺陷 

分 类 号：O471[理学—半导体物理]