碳氟感应耦合等离子体的SiO_2介质刻蚀的研究  

Etching of SiO_2 Material with Inductively Coupled Fluorocarbon Plasma

作　　者：虞一青[1] 辛煜[1] 宁兆元[1] 

机构地区：[1]苏州大学物理科学与技术学院

出　　处：《真空科学与技术学报》2007年第2期146-150,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.10305008)资助

摘　　要：使用感应耦合等离子体技术,通过改变源气体流量比R(R=[C4F8]/{[C4F8]+[Ar]})、射频源功率、自偏压等条件进行了SiO2介质刻蚀实验研究。碳氟等离子体的特征由朗谬探针和发射光谱技术来表征。结果表明,SiO2的刻蚀速率随放电源功率和射频自偏压的增大而单调上升,与R的关系则存在R=8%处的刻蚀速率峰值。C2基团的发射谱线强度随R的变化类似于SiO2刻蚀速率对R的依赖关系,对此给出了解释。在此基础上,对SiO2介质光栅进行了刻蚀。结果显示,在较大的R及自偏压等条件下,刻蚀后的槽形呈轻微的锥形图案,同时光刻胶掩膜图形出现分叉。结合扫描电镜技术对此进行了分析,认为光刻胶表面与侧面的能量传递和聚合物再沉积是导致出现上述现象的原因。The influence of various foctors,including the gas flow ratio, R = C4F8/Ar ＋ C4F8,source power, and self-bias,on etching of SiO2material by inductively coupled Ar＋ C4F8 plasma was systematically studied.The characteristics of the plasma were monitored with optical emission spectrescopy（OES） and Langmuir probe. The results show that as both the source power and the self-bias increase, the etching rate monotonically increases. The etching rate maximizes at a gas flow ratio of 8 %. A grating of SiO2, etched with the inductively coupled fluorocarbon plasma,was characterized with scanning electron microscopy（SEM）. A slightly tapered profile and branching of the photo-resist were observed,especially at a larger R and a higher self-bias.Possible mechanism（s） was tentatively discussed.

关 键 词：感应耦合等离子体 发射光谱 介质刻蚀 扫描电镜 

分 类 号：O53[理学—等离子体物理] TN3[理学—物理]