InN纳米线的低压化学气相沉积及其场发射特性研究  

Low pressure chemical vapor deposition synthesis of InN nanowires and their field electron emission

作　　者：叶凡[1] 蔡兴民[2] 王晓明[1] 赵建果[1] 谢二庆[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000 [2]深圳大学物理科学学院,深圳518060

出　　处：《物理学报》2007年第4期2342-2346,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60176002)资助的课题.~~

摘　　要：利用低压化学气相沉积方法在以Au作催化剂的Si衬底上生长了InN纳米线.扫描电子显微镜分析表明,这些纳米线的直径在60—100nm的范围内,而其长度大于1μm.高分辨透射电子显微镜图像表明,合成的纳米线中含有六方相和立方相的InN晶体.这些InN纳米线具有良好的场发射特性和稳定的场发射电流,其开启场为10.02V/μm(电流密度为10μA/cm2),在24V/μm的电场下,其电流密度达到5.5mA/cm2.此外,对InN纳米线的场发射机理也进行了讨论.InN nanowires were prepared on Si substrates by low pressure chemical vapor deposition using Au as the catalyst. Scanning electron microscopy showed that the diameter of these nanowires is 60-100 nm, and the length is larger than 1 μm. High resolution transmission electron microscopy showed that the synthesized nanowires are a mixture of hexagonal and cubic phase. The field electron emission characteristics of these InN nanowires are good and the field emission current is stable. The turn-on electric field was 10.02 V/μm（the current density being 10 μA/cm^2 ）, and at the high electric field of 24 V/μm, the current density was as high as to 5.5 mA/cm^2 . The field electron emission mechanism of these nanowires is discussed.

关 键 词：InN纳米线 场电子发射 非线性Fower-Nordheim曲线 

分 类 号：O472[理学—半导体物理]