共振隧穿二极管的设计、研制和特性分析  

Design,Fabrication,and Analysis of a Resonant Tunneling Diode

作　　者：张磊[1] 杨瑞霞[1] 武一宾[2] 商耀辉[2] 高金环[1] 

机构地区：[1]河北工业大学,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《Journal of Semiconductors》2007年第5期737-740,共4页半导体学报（英文版）

摘　　要：用分子束外延技术在半绝缘GaAs衬底上生长制备了不同结构的AlAs/GaAs/InGaAs两垒一阱RTD单管.经过材料生长设计和工艺的改进,测得室温下器件的最高PVCR为2·4,峰值电流密度达到36·8kA/cm2.进行直流参数测试,得到RTD的I-V特性曲线,对量子阱宽度和帽层厚度对I-V特性的影响进行了分析.AIAs/GaAs/InGaAs double barrier-single well structures are grown on semi-insulating GaAs substrates by molecular beam epitaxy. By improving on material growth design and process design,the maximum PVCR of the RTD has reached 2.4,and the density of the peak current has reached 36. 8kA/cm^2 . The parameters and I-V characteristics of the RTD have been measured,and the effects of quantum well width and thickness of the cap layer on the RTD I-V characteristics are analyzed.

关 键 词：共振隧穿二极管 I-V特性曲线 峰谷电流比 负微分电阻 

分 类 号：TN312[电子电信—物理电子学]