有机添加剂对铜互连线脉冲电镀的影响  

Effect of Organic Additives on Pulsed Electroplating of Cu Interconnect

作　　者：陈敏娜[1] 曾磊[1] 汪礼康[1] 张卫[1] 徐赛生[1] 张立锋[1] 

机构地区：[1]复旦大学微电子研究院复旦-诺发铜互连研究中心,上海200433

出　　处：《半导体技术》2007年第5期387-390,共4页Semiconductor Technology

摘　　要：针对集成电路电镀铜技术,研究了三种有机添加剂(加速剂、抑制剂和平整剂)对铜互连线脉冲电镀的影响及其机制。采用电化学方法LCV(线性循环伏安法)和CP(计时电势法),分析了不同添加剂浓度下电镀过程的极化情况;用SEM表征了三种添加剂对脉冲电镀铜的镀层结构形貌的影响。研究发现,适当浓度的添加剂组成能显著改善镀层的覆盖度、紧致均匀性和平整性。The influence of accelerator, suppressor and leveler on copper deposits of pulse electroplating applied in copper interconnecting technique as well as their working principle were studied. The polarization processes of cathode under different additive concentration were analyzed by LCV （linear cyclic voltammetry） and CP （chronopotentiometry） while the additives＇ effects on morphology of copper pulse deposits were measured by SEM. It＇s found that, proper concentration of additives can remarkably improve coverage, compactness and smoothness of the deposits.

关 键 词：铜互连 添加剂 脉冲电镀 粗糙度 极化 

分 类 号：TQ153[化学工程—电化学工业]