固体C_(60)/n型GaAs接触电学性质  

Electrical Properties of Contact of Solid C_(60) and n-type GaAs

作　　者：陈开茅[1] 张亚雄[1] 秦国刚[1] 金泗轩[1] 吴克[1] 李传义[1] 顾镇南[2] 周锡煌[2] 

机构地区：[1]北京大学物理系,北京100871 [2]北京大学化学系,北京100871

出　　处：《Journal of Semiconductors》1997年第1期70-75,共6页半导体学报（英文版）

基　　金：国家自然科学基金;国家教委优秀年轻教师基金

摘　　要：本文研究了固体C60和n型GaAs构成的异质结的电学特性，电流-电压测量结果表明这种接触具有相当理想的整流特性，其理想因子接近于1．电流-温度测量表明，在固定正向偏压下，其电流是温度的指数函数，从中可以确定接触的有效势垒高度为1．02eV高频C-V和深能级瞬态谱（DLTS）测量结果表明，在GaAs导带以下0．35eV附近存在着密度为1011／cm2的界面态，这些界面态可能起源于C60和GaAs的相互作用．The electrlcal properties of the heterojunction of solid C60/n-type GaAs arestudied. The results of current-voltage measurements indicate that this contact has apretty ideal rectifying property, and the idea1ity factor is near to 1. The current-temperaturemeasurements show that under a fixed forward bias the current is an exponential functionof reciprocal temperature from which the effective barrier height of the contact isdetermined to be 1. 02eV. High frequencies C-V and deep level transient spectroscopy (DLTS)measurements show that at C60/GaAs interface there is a trap with denslty of about 1011/cm2 and with energy level at 0. 35eV below the conduction band. The trap maybe originatefrom interaction of C60 and GaAs.

关 键 词：固体 碳60 砷化镓 N型 接触电学性质 

分 类 号：TN304.23[电子电信—物理电子学]