应变SiGe SOI量子阱沟道PMOSFET阈值电压模型研究  

Study on threshold voltage model of strained SiGe quantum well channel SOI PMOSFET

作　　者：张鹤鸣[1] 崔晓英[1,2] 胡辉勇[1] 戴显英[1] 宣荣喜[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071 [2]中国电子科技集团第五研究所分析中心

出　　处：《物理学报》2007年第6期3504-3508,共5页Acta Physica Sinica

基　　金：国家部委预研项目(批准号:51308040203;51408061105DZ0171)资助的课题~~

摘　　要：在绝缘层附着硅(SOI)结构的Si膜上生长SiGe合金制作具有SiGe量子阱沟道的SOIp型金属氧化物半导体场效应晶体管(PMOSFET),该器件不仅具有SOI结构的优点,而且因量子阱中载流子迁移率高,所以进一步提高了器件的性能.在分析常规的SiSOI MOSFET基础上,建立了应变SiGe SOI量子阱沟道PMOSFET的阈值电压模型和电流-电压(I-V)特性模型,利用Matlab对该结构器件的I-V特性、跨导及漏导特性进行了模拟分析,且与常规结构的器件作了对比.模拟结果表明,应变SiGe SOI量子阱沟道PMOSFET的性能均比常规结构的器件有大幅度提高.A SOI PMOSFET with SiGe quantum well channel was formed by growing the SiGe film on the Si SOI structure. Not only does the device have the advantage of SOI structure, but also the performance of the device is improved because the carrier mobility in SiGe quantum well is much higher than that in Si. In this paper, the threshold voltage model of strained SiGe SOI quantum well channel PMOSFET is established on the basis of general Si SOI MOSFET, also the model of voltage-curront characteristic is founded. The characteristic of voltage-curront, transconductance and leak conductance were simulated and analyzed using MATIAB. The results of the simulation confirm that the strained SiGe SOI quantum well channel PMOSFET performs much better than the conventional PMOSFET.

关 键 词：应变SiGe SOI MOSFET 阈值电压 模型 

分 类 号：TN386[电子电信—物理电子学]