基于国产外延材料的SiC基AlGaN/GaN HEMT器件研制  

AlGaN/GaN HEMT Based on Native SiC Epitaxy Material

作　　者：陈晓娟[1] 李诚瞻[1] 刘新宇[1] 罗卫军[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《电子器件》2007年第3期738-740,共3页Chinese Journal of Electron Devices

基　　金：国家973计划"新一代化合物半导体电子器件与电路研究"资助项目(2002CB311903);中国科学院创新资助项目(KGCX2-SW-107)

摘　　要：本文报道了基于国产外延材料的SiC基Al GaN/GaN高迁移率晶体管(HEMT)器件的研制,外延材料利用金属有机物化学气相淀积技术(MOCVD)生长,器件栅长0.8μm,输出电流密度达到0.94A/mm,在5.4GHz下,单指型管芯获得了3.1W/mm的连续波测试功率,与蓝宝石衬底的器件相比,由于自热效应的有效改善,输出功率能力大大提高.This article reported on the AlGaN/GaN HEMT device fabrication based on native epitaxy material, which is grown by MOCVD on SiC wafter. The device gate is 0. 8μm, the maximum current density is 0. 94 A/mm. At the frequency of 5. 4 GHz, the maximum power density of single finger device is 3. 1 W/mm, under the continue wave condition. Due to the alleviated self-thermal effect, the device power ability has been improved a lot compared to that based on sapphire.

关 键 词：SIC ALGAN/GAN HEMT 自热效应 外延材料 

分 类 号：TN355[电子电信—物理电子学]