SiCl_4/H_2为气源低温沉积多晶硅薄膜低温电学特性的研究  

Study on low temperature electrical properties of polycrystalline silicon thin films deposited at low temperatures using SiCl_4/H_2

作　　者：刘丽娟[1] 罗以琳[1] 黄锐[1] 林璇英[1] 

机构地区：[1]汕头大学物理系,广东汕头515063

出　　处：《功能材料》2007年第6期876-878,共3页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(G2000028208)

摘　　要：对用SiCl4／H2为源气体、采用等离子体增强化学气相沉积（PECVD）技术制备的多晶硅薄膜进行了低温电学特性的研究。实验结果表明，多晶硅薄膜的暗电导强烈依赖于温度，在300～90K的温度范围内呈现不同的导电特性。对多晶硅薄膜，其导电特性还与晶化率有关，晶化率越大电导率越大。测量数据表明，低晶化率薄膜电输运主要由电子热发射跃过势垒所贡献，但对于高晶化率的薄膜要同时考虑电子隧穿对电导的影响。The electrical properties of polycrystalline silicon thin films which were prepared by plasma-enhanced chemical vapour deposition technique using SiCl4/H2 as source gases were studied at low temperature. The experimental results indicate that the dark conductivity of polycrystalline silicon films is strongly dependent on temperature. It shows different electrical characteristic through the range of 300 to 90K. The conductivity of polycrystalline silicon thin films is also related to the volume fractions of crystalline. With the increase of the volume fractions of crystalline, the conductivity increase. The data shows that the current transport of low volume fractions of crystalline films was contributed by electronic thermal emission jumped over barriers, but to the high volume fractions of crystalline films we must consider simultaneously the impact of electronic tunneling through the grain boundaries.

关 键 词：多晶硅薄膜 电导率 低温 晶化率 

分 类 号：O484.3[理学—固体物理]