衬底温度对直流磁控溅射沉积AlN薄膜组织结构的影响  

Effect of Substrate Temperature on Texture and Structure of AlN Thin Films Deposited by DC Magnetron Sputtering

作　　者：刘新胜[1] 周灵平[1] 门海泉[1] 李德意[1] 李绍禄[1] 

机构地区：[1]湖南大学材料科学与工程学院,湖南长沙410082

出　　处：《矿冶工程》2007年第3期82-85,共4页Mining and Metallurgical Engineering

摘　　要：采用直流反应磁控溅射法在不同衬底温度（20-490℃）下沉积了A lN薄膜,用XRD分析了薄膜的择优取向,用高分辨场发射扫描电镜来表征了薄膜的表面型貌。实验结果表明,当衬底处在20℃冷却的样品台沉积A lN时其上没有晶态的薄膜生成;衬底处于等离子体自加热时,薄膜具有混合的取向;随着温度的升高,薄膜的（002）晶面择优取向度逐渐增大,薄膜的结晶度越来越高,同时更加致密化。当温度到达400℃时,（002）晶面取向度达到最大。温度达到490℃时,薄膜再度出现了明显的（100）,（101）晶面的衍射峰。AlN thin films were deposited by DC magnetron reactive sputtering method under various substrate temperature from 20 ℃ to 490℃. The preferential orientation and surface morphology of the as-deposited films were respectively studied by X-ray diffraction （XRD）, field emission scanning electron microscopy （FESEM）. The results revealed that there was no crystallized AlN thin films when the substrates was laid on hold cooled by 20 ℃ water, the films showed randomly orientated as all the （100）, （002）, （101） planes when the substrate lay the heating hold under self-heating of plasma. As followed increasing of the substrates temperature, not only lead to increasing of the degree of （002） preferred orientation, but also improve crystallization and compact of the films. When the substrate temperature reached 400 ℃, the （002） preferred orientation degree of the AlN thin films reached the highest value. The films evidently appeared （100）, （101） peaks of XRD pattern again when the substrate temperature came to 490 ℃.

关 键 词：ALN薄膜 衬底温度 择优取向 表面形貌 反应磁控溅射 

分 类 号：TB43[一般工业技术] TB321