Pseudo-MOS方法表征SIMOX SOI材料总剂量辐照效应  

Total-dose radiation effect for SIMOX SOI materials with the pseudo-MOS method

作　　者：杨慧[1] 张正选[1] 张恩霞[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《功能材料与器件学报》2007年第3期233-236,共4页Journal of Functional Materials and Devices

摘　　要：为了缩短SOI材料的改性研究周期,利用pseudo-MOS方法研究了SIMOX SOI材料的总剂量辐照效应。试验采用硅注入绝缘埋层后退火得到改性的SIMOX SOI材料,通过对比改性前后样品在辐照前后的pseudo-MOSFET ID-VG特性曲线,分析改性工艺的影响。研究结果表明,合适的改性工艺能有效提高材料抗总剂量辐照效应的能力,pseudo-MOS方法在大大缩短SOI材料改性周期的基础上,能准确、快捷地对材料的总剂量辐照效应进行表征。To reduce the modification period, the pseudo - MOS techni total dose radiation performance of Separation - by- implanted - oxygen que was used to characterize the （SIMOX） Silicon - on - insulaMOSFET ID - VG characteristics were tested before and after radiation. The result shows that a proper modification technology could improve the radiation hardness of the materials remarkably. It also suggests that the pseudo -MOS method could be efficiently used to study the total -dose radiation effect for SOI materials.

关 键 词：SIMOX SOI 总剂量辐照效应 Pseudo—MOS 

分 类 号：TN304[电子电信—物理电子学]