日盲型AlGaN PIN紫外探测器的研制  

PIN Solar-blind Ultraviolet Detectors Based on AlGaN

作　　者：黄烈云[1] 吴琼瑶[1] 赵文伯[1] 叶嗣荣[1] 向勇军[1] 刘小芹[1] 黄绍春[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2007年第3期342-344,共3页Semiconductor Optoelectronics

摘　　要：采用MOCVD方法在双面抛光的(0001)蓝宝石衬底上生长了高铝组分AlGaN材料,研制出日盲型AlGaN PIN紫外探测器。详细介绍了该器件的结构设计和制作工艺,并对该器件进行了光电性能测试。测试结果表明:器件的正向开启电压约为4.5 V,反向击穿电压大于20V;常温下(300 K),该器件在3 V反向偏压下的暗电流约为50 pA,在零偏压下270 nm处峰值响应度达到0.12 A/W,长波截止波长小于285 nm。High Al content AlGaN was grown on double polished （0001） sapphire substrate by MOCVD, and AlGaN based solar-blind PIN UV photodetector was developed. Its device structure and fabrication processing are introduced in detail. Measurement results show that its turn-on voltage is about 4.5 V, and VBR〉20 V; the dark current is about 50 pA at -3 V bias voltage; the peak responsivity at zero bias can reach 0. 12 A/W and cut-off long-wavelength is short than 285 nm.

关 键 词：紫外探测器 ALGAN 日盲 刻蚀 欧姆接触 

分 类 号：TN312.4[电子电信—物理电子学]