4H-SiC(004)面双晶衍射摇摆曲线的分析  

Analysis on 4H-SiC(004)Plane by Double Crystal X-Ray Diffraction

作　　者：马永强[1] 武一宾[2] 杨瑞霞[1] 齐国虎[2] 李若凡[1] 商耀辉[2] 陈昊[2] 牛晨亮[2] 

机构地区：[1]河北工业大学,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2007年第7期581-584,共4页Semiconductor Technology

基　　金：国家重点实验室基金资助项目(9140C0606020606;51432040204DZ2);国家重点基础研究发展计划(973)资助项目(51327020202;51327020201)

摘　　要：用X射线双晶衍射法(XRD)对4H-SiC衬底和在该衬底上外延生长的4H-SiC单晶样品(004)面进行测试,在所有样品的测试结果中发现,摇摆曲线主峰左侧160″附近均出现傍肩,并且主峰衍射强度也较低。依据X射线衍射理论对系统射线在测试样品(004)面的衍射峰位展宽进行计算,并对4H-SiC原子结构进行了分析。研究结果证实,摇摆曲线中傍肩的存在与射线源中的Ka2射线参与衍射有关,而相对较低的衍射强度受其(004)面的特殊双层原子结构的影响。4H-SiC substrates and epitaxial samples were studied on （004） plane by double crystal X-ray diffractometer （XRD）. All experimental results indicated that there was a splitting peak on the left about 160 arcsec to the main peak in the rocking curves for all samples, while the intensities of main peak were very low. According to the theory on X-ray diffraction, the peak broadening with systemic ray diffracting on （004） plane was calculated, while the atom structure of 4H-SiC was analyzed. Research results approve that the splitting peak is related to Ka2 ray diffraction on the plane of crystal and the special double-atom-layer structure of （004） plane affects the diffraction intensity.

关 键 词：X射线双晶衍射 摇摆曲线 4H-SIC 双层原子结构 

分 类 号：TN304.2[电子电信—物理电子学]