ECR-PEMOCVD技术生长的GaMnN薄膜的特性  

Characteristics of GaMnN Film Grown by ECR-PEMOCVD

作　　者：何欢[1] 秦福文[1] 吴爱民[1] 王叶安[1] 代由勇[2] 姜辛[1] 徐茵[1] 顾彪[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024 [2]山东大学物理与微电子学院,济南250100

出　　处：《Journal of Semiconductors》2007年第7期1053-1057,共5页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60476008)~~

摘　　要：利用电子回旋共振-等离子体增强金属有机物化学气相沉积(ECR-PEMOCVD)技术,在蓝宝石(α-Al2O3)衬底上生长出具有一定Mn含量的GaMnN稀磁半导体薄膜.RHEED图像呈现清晰的斑点状点阵,表明薄膜为单晶,表面不是很平整,为三维岛状生长模式.X射线衍射分析表明薄膜为六方结构,沿c轴方向生长,结晶性良好.AFM显示薄膜是由许多亚微米量级的晶粒按一致的取向规则堆砌而成的.超导量子干涉仪(SQUID)测量显示在室温下薄膜依然具有铁磁性,居里温度约为400K.DMS GaMnN film with a certain concentration of Mn and good crystal qualities was successfully grown on sapphire substrate （α-Al2O3） by ECR-PEMOCVD. The RHEED graphs present a clear spot-like lattice and a surface that is not very smooth,indicating that the GaMnN film is single crystalline and its growth mode was three-dimensional island. XRD analysis shows that the film has a hexagonal structure with c-axis orientation and very good crystallinity. The AFM test result shows that the GaMnN films are composed of many submicron grains with the same orientation. Superconducting quantum interference device （SQUID） measurement shows apparent ferromagnetism at room temperature,and the Curie temperature of the film is about 400K.

关 键 词：ECR-PEMOCVD 稀磁半导体 GAMNN 室温铁磁性 居里温度 

分 类 号：TN304.05[电子电信—物理电子学]