p型氮化镓不同掺杂方法研究  

Investigation of different doping methods to the p-type GaN

作　　者：邢艳辉[1] 韩军[1] 邓军[1] 刘建平[1] 牛南辉[1] 李彤[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《功能材料》2007年第7期1123-1124,1131,共3页Journal of Functional Materials

基　　金：北京市自然科学基金资助项目(D0404003040221);国家高技术研究发展计划(863计划)资助项目(2004AA311030)

摘　　要：采用金属有机物化学气相淀积(MOCVD)技术,对p型GaN∶Mg的均匀掺杂,delta掺杂和生长停顿掺杂3种不同掺杂方法的外延片研究,通过对电学的、光学的、表面形貌分析表明,生长停顿方法的外延片有较好的晶体质量,但因生长停顿过程中引入额外杂质增加自补偿效应;delta掺杂方法明显提高了空穴浓度,降低了电阻率,提高空穴迁移率,取得较好的表面形貌。Uniformity-doping,δ-doping and growth-interruption-doping GaN：Mg has been investigated by metal-organic chemical vapor deposition.It was demonstrated through electrical,optical,and surface studies that the film of growth-interruption-Mg-doping have better crystal quality than others two,this doping method increase self-compensation because of the incorporation of additional impurities during the interruption period.Mg-δ-doping significantly enhance hole concentration leading to reduced p-type resistivity,enhanced hole mobility,also obtain smooth surface morphology.

关 键 词：p-氮化镓 Δ掺杂 原子力显微镜 金属有机物化学气相淀积 

分 类 号：TN304[电子电信—物理电子学]