真空磁过滤弧沉积碳氮薄膜的研究  

INVESTIGATION ON CN x THIN FILMS PREPARED BY FILTERED ARC DEPOSITION

作　　者：陈智颖[1] 俞跃辉[1] 赵建平[1] 王曦[1] 周祖尧[1] 杨石奇[1] 柳襄怀[1] 施天生[1] 

机构地区：[1]中科院上海冶金研究所离子束开放研究实验室

出　　处：《功能材料与器件学报》1997年第1期72-76,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金

摘　　要：本文采用真空磁过滤弧沉积技术，在Ｓｉ（１１１）、石英及Ｔｉ／Ｃ衬底上制备得到非晶碳氮（ＣＮｘ）薄膜。采用卢瑟福背散射分析对薄膜的面密度及Ｎ含量进行定量计算。用紫外－可见透射光谱与红外反射光谱研究了薄膜的光学性能。结果表明：随着薄膜中氮含量的增加，碳氮薄膜的光学禁带宽度减小，红外反射率增加。另外，就不同氮气分压对薄膜结构的影响进行了研究。CN x films on silicon (111) wafer, quartz and Ti/C substrate with nitrogen concentration up to 20 at% have been prepared by a new plasma deposition technique, filtered arc deposition. The nitrogen concentration and area density of the films are measured by Rutherford back scattering. The optical properties of the CN x films are also characterized by ultraviolet visible transmission and infrared reflective spectrometers. Results indicate that the optical band gap of the CN x films is decreased with the increasing nitrogen concentration, accompanied with the reflectance increase of the films. Furthermore, the influence of N 2 partial pressure on the structure of the films with different nitrogen concentration is discussed.

关 键 词：光学性能 碳氮薄膜 薄膜 FAD 弧源沉积 

分 类 号：TB43[一般工业技术] O484.41[理学—固体物理]