一种控制硅深刻蚀损伤方法的研究  

Study on Methods to Protect Silicon Microstructures from the Damages in Deep Reactive Ion Etching

作　　者：阮勇[1] 叶双莉[1] 张大成[2] 任天令[1] 刘理天[1] 

机构地区：[1]清华大学微电子所微/纳器件与系统实验室,北京100084 [2]北京大学微电子研究院,北京100871

出　　处：《微纳电子技术》2007年第7期37-39,共3页Micronanoelectronic Technology

摘　　要：提出了提高硅深反应离子刻蚀的新方法。该方法在硅的侧壁PECVD淀积SiO2，硅的底部采用热氧化的方法形成SiO2。由于在刻蚀中硅与SiO2的刻蚀选择比为120∶1-125∶1，因此SiO2层可以抑制在硅-玻璃结构的刻蚀中出现的lag和footing效应，扫描电镜结果也证明，采用改进工艺后的硅结构在经过长时间的过刻蚀后仍然保持了完整性。硅陀螺测试结果也证明了改进工艺的正确性。New methods for improving the quality of the silicon deep reactive ion etching （DRIE） procedure were investigated. It suggested that a PECVD oxide layer was deposited at the silicon sidewall and a thermal oxide layer was formed at the silicon backside. Due to the siliconto SiO2 etching selectivity （120 ： 1 ~125 ： 1）, these oxide layers could protect the silicon microstructures from the damages caused by the lag and footing effects usually occurred in the basic silicon-on- glass （SOG） process. The SEM result confirms that the silicon structure can endure a long time overetch and the structure surface can remain intact by the modified processes. The gyroscope device test results are also in good agreement with new process methods.

关 键 词：微电子机械系统 硅-玻璃阳极键合 硅深刻蚀 刻蚀损伤 

分 类 号：TN405.983[电子电信—微电子学与固体电子学]