MEMS硅膜电容式气象压力传感器的研制  

Development of Capacitive Pressure Sensor Based on MEMS

作　　者：庞程[1] 赵湛[1] 杜利东[1] 

机构地区：[1]中国科学院电子学研究所传感技术国家重点实验室

出　　处：《微纳电子技术》2007年第7期249-251,278,共4页Micronanoelectronic Technology

摘　　要：基于MEMS的电容式压力传感器以其低成本高性能在气象测量中有着广阔的应用前景。利用ANSYS软件模拟接触式电容压力传感器的工作状态,得到硅膜的形变和应力分布状况。制作流程采用简单标准的工艺:利用KOH各向异性腐蚀进行硅片大面积、大深度腐蚀减薄,分析了其浓度配比对硅面平整度特性的影响,采用阳极键合形成真空腔,试验反应离子深刻蚀形成硅膜的效果。芯片测试结果表明方案可行。Capacitive pressure sensor based on MEMS has a wide application tuture wtttl tow cost and high performance. The sensor working state was simulated with ANSYS for obtaining the distribution of stress. The simple and standard fabrication processes were used：KOH anisotropic etching silicon surface, and analyzing the effects of solution consistence; formed cavity by anodic bonding. The DRIE was employed to form the membrane of silicon. The results show that this sensor is applicable in baric pressure measurement.

关 键 词：电容压力传感器 各向异性腐蚀 阳极键合 反应离子深刻蚀 

分 类 号：TP212.1[自动化与计算机技术—检测技术与自动化装置]