单片集成0·8μm栅长GaAs基InGaP/AlGaAs/InGaAs增强/耗尽型赝配高电子迁移率晶体管  

Monolithic Integration of 0.8μm Gate-Length GaAs-Based InGaP/AlGaAs/InGaAs Enhancement-and Depletion-Mode PHEMTs

作　　者：徐静波[1] 张海英[1] 尹军舰[1] 刘亮[1] 李潇[1] 叶甜春[1] 黎明[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2007年第9期1424-1427,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60276021);国家重点基础研究发展规划(批准号:2002CB311901)资助项目~~

摘　　要：优化了GaAs基InGaP/AlGaAs/InGaAs赝配高电子迁移率晶体管(PHEMT)的外延结构,有利于获得增强型PHEMT的正向阈值电压.采用光学接触式光刻方式,实现了单片集成0.8μm栅长GaAs基InGaP/AlGaAs/In-GaAs增强/耗尽型PHEMT.直流和高频测试结果显示:增强型(耗尽型)PHEMT的阈值电压、非本征跨导、最大饱和漏电流密度、电流增益截止频率、最高振荡频率分别为0.1V(-0.5V),330mS/mm(260mS/mm),245mA/mm(255mA/mm),14.9GHz(14.5GHz)和18GHz(20GHz).利用单片集成增强/耗尽型PHEMT实现了直接耦合场效应晶体管逻辑反相器,电源电压为1V,输入0.15V电压时,输出电压为0.98V;输入0.3V电压时,输出电压为0.18V.The material structure of GaAs-based InGaP/AlGaAs/lnGaAs PHEMTs was optimized to obtain the positive threshold voltage of an enhancement-mode PHEMT. Contact-mode photolithography was used for realizing the monolithic integration of 0. 8μm gate length GaAs-based InGaP/AlGaAs/InGaAs enhancement- and depletion-mode PHEMTs. Excellent DC and high frequency performance are achieved. VT, gm, JDSS, fT, and fmax are 0.1V, 330mS/mm, 245mA/mm, 14.9GHz, and 18GHz for E-mode PHEMTs, and - 0. 5V, 260mS/mm, 255mA/mm, 14.5 GHz, and 20GHz for D-mode PHEMTs, respectively. DCFL inverters based on monolithic integration of GaAs-based InGaP/AlGaAs/InGaAs enhancement- and depletionmode PHEMTs are fabricated. The supply voltage is 1V. When the input voltages are 0. 15 and 0. 3V,the output voltages are 0. 98 and 0.18V, respectively.

关 键 词：单片集成 增强型 耗尽型 赝配高电子迁移率晶体管 阈值电压 

分 类 号：TN386[电子电信—物理电子学]