聚焦离子束辐照对MOS晶体管性能的影响  

Effect of Irradiation on MOS Transistor Induced by Focused Ion Beam

作　　者：宋云[1] 陆海纬[1] 陈忠浩[1] 张兆强[1] 郑国祥[1] 李越生[1] 曾韡[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《固体电子学研究与进展》2007年第3期295-300,共6页Research & Progress of SSE

摘　　要：聚焦离子束(Focusedionbeam)系统现在被广泛应用于大规模集成电路的修补中,FIB辐照对器件性能的影响受到广泛的关注。研究了两种栅尺寸的NMOS晶体管(20μm×20μm和20μm×0.8μm)在不同辐射剂量作用下的阈值电压变化情况,发现在辐射后的阈值电压都发生了明显的漂移,辐照后的晶体管阈值电压在室温环境下静置数日后有约30%的恢复,而在退火条件下阈值电压几乎完全恢复。文中从理论上对电离辐射引起阈值电压的漂移予以解释,使实际的电路修补工作最优化,从而确保器件在修补后的可靠性。Focused ion beam systems are now widely used in performing circuit modifications. Two different gate size transistors （20μm × 20μm and 20μm × 0.8μm） are used in this experiment. Significant shifts in threshold voltage were observed under four different ion dose irradiations. FIB-induced threshold voltage shifts were bake-recoverable. The phenomena that threshold voltage shift associated with the FIB irradiation was explained by the interface charge theory, and the modification processes can be optimized.

关 键 词：聚焦离子束 电离辐射 金属氧化物半导体晶体管 阈值电压 

分 类 号：TN305[电子电信—物理电子学]