4W/mm蓝宝石衬底AlGaN/GaN HEMT  

4 W/mm AlGaN/GaN HEMTs Grown on Sapphire Substrate

作　　者：任春江[1] 李忠辉[1] 焦刚[1] 董逊[1] 李肖[1] 陈堂胜[1] 李拂晓[1] 

机构地区：[1]单片集成电路与模块国家级重点实验室,南京210016

出　　处：《固体电子学研究与进展》2007年第3期320-324,共5页Research & Progress of SSE

摘　　要：报道了利用南京电子器件研究所生长的蓝宝石衬底AlGaN/GaN异质结材料制作的HEMT,器件功率输出密度达4W/mm。通过材料结构及生长条件的优化,利用MOCVD技术获得了二维电子气(2DEG)面密度为0.97×1013cm-2、迁移率为1000cm2/Vs的AlGaN/GaN异质结构材料,用此材料完成了栅长1μm、栅宽200μm AlGaN/GaN HEMT器件的研制。小信号测试表明器件的fT为17GHz、最高振荡频率fmax为40GHz;负载牵引测试得到2GHz下器件的饱和输出功率密度为4.04W/mm。AlGaN/GaN HEMTs grown on sapphire substrate were fabricated with 4 W/mm output power density. The devices with a gate length of 1 μm and a gate width of 200 μm were fabricated on the AlGaN/GaN heterostructure sample grown by MOCVD on sapphire substrate. 2-demensional electron gas （2DEG） density of 0. 97 × 10^13 cm^-2 and mobility of 1 000 cm^2/Vs were measured by Hall measurement. A current gain cut-off frequency of 17 GHz and a maximum oscillation frequency of 40 GHz were obtained through small signal measurement. Saturation output power density reached to 4.04 W/ram at 2GHz employing a load-pull setup under optimum matching.

关 键 词：氮化镓 高电子迁移率晶体管 二维电子气 单位截止频率 最高振荡频率 

分 类 号：TN325.3[电子电信—物理电子学]