RTD/HEMT串联型共振隧穿三极管的设计与研制  

Design and Fabrication of Resonant Tunneling Transistor with RTD/HEMT in Series Structure

作　　者：梁惠来[1] 郭维廉[1] 宋瑞良[1] 齐海涛[1] 张世林[1] 胡留长[1] 李建恒[1] 毛陆虹[1] 商跃辉[2] 冯震[2] 田国平[2] 李亚丽[2] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《Journal of Semiconductors》2007年第10期1594-1598,共5页半导体学报（英文版）

摘　　要：对RTD/HEMT串联型共振隧穿三极管进行了设计和研制.测量结果表明:最大电流峰谷比为17.6∶1,栅压对峰值电压调控能力在1.5～7.7范围内,-3dB截止频率为4GHz,此种器件可与HEMT在结构和工艺上兼容,可应用于HEMT高速电路.The design and fabrication of a resonant tunneling transistor with an RTD/HEMT in-series structure are presented. The measurement results of the fabricated devices show that the maximum peak valley current ratio （PVCR） is 17.6 ： 1, the gate voltage modulating peak voltage ratio is in the range of 1.5-7. 7,and the -3dB cut-off frequency is about 4GHz. This device is compatible with HEMTs in the device structure and fabrication technology,and can be used in high speed circuits with HEMTs devices.

关 键 词：RTT RTD HEMT 跨导截止频率 电流峰谷比 

分 类 号：TN321[电子电信—物理电子学]