降低功率MOSFET导通电阻R_(ON)的研究进展  

Progress in the Research of R_(ON) for power MOSFET

作　　者：黄淮[1] 吴郁[1] 亢宝位[1] 

机构地区：[1]北京工业大学

出　　处：《电力电子》2007年第4期13-18,共6页Power Electronics

摘　　要：本文综述了降低功率MOSFET导通电阻的研究进展,从打破硅极限与降低沟道电阻两方面入手,介绍与分析了降低的各种新结构、新思想,并对其进行比较。最后,列出了其它降低导通电阻的方法。The progress in the research of for power MOSFET is introduced. These progresses that mostly focus on breaking the limit line of silicon and decrease of are described in detail and analyzed. In the end, some other new thoughts about are also presented.

关 键 词：MOSFET 导通电阻 COOLMOSFET SUPERJUNCTION RESURE FLIMOSFET Super 3D 

分 类 号：TN386.1[电子电信—物理电子学]