双层多晶硅FlotoxEEPROM单元的优化设计  

OPTIMIZA TION DESIGN OF TWO-POLY SILICONFLOTOX EEPROM CELL

作　　者：于宗光 许居衍[1,2] 王鸿宾 魏同立[1,2] 

机构地区：[1]华晶集团中央研究所 [2]东南大学

出　　处：《应用科学学报》1997年第1期82-88,共7页Journal of Applied Sciences

基　　金：江苏省青年科技基金

摘　　要：建立了双层多晶硅ｆｌｏｔｏｘＥＥＰＥＯＭ存储管的阈值电压模型，利用该模型研究了擦／写阈值与擦／写时间、编程电压、隧道孔面积、隧道氧化层厚度的关系，采用１．４μｍＣＭＯＳ工艺设计了双层多晶硅ｆｌｏｔｏｘ单元。模拟结果和实验结果基本一致，该阈值电压模型为ＥＥＰＥＯＭ单元的优化设计提供了一种快速、简便、实用的准则。la this paper, the model of two-polysilicon folotox EEPROM threshold voltage model has been established . Then , the relatioa between erase/write tbredbold voltage and erase/write time, programing voltage, tunnel area, folox thickness have been studied based on this model. Tbe two-polysilicon fotox EEPROM cell has beea designed The experiment reaults are approximately- concordant with the sizaulation results. So, the thresbold model can be used as a fast, sim ple, actual ruler for EEPROM cell optimization deaign.

关 键 词：浮栅隧道氧化物 EEPROM 只读存贮器 双层多晶硅 

分 类 号：TP333.7[自动化与计算机技术—计算机系统结构]