微波等离子体CVD方法制备金刚石薄膜  

The Preparation of Diamond Films Deposited Using Microwave Plasma CVD Method

作　　者：顾长志[1] 金曾孙[1] 吕宪义[1] 邹广田[1] 高谷松文[2] 坂本幸弘 

机构地区：[1]吉林大学超硬材料国家重点实验室,长春130023 [2]日本千叶工业大学

出　　处：《吉林大学自然科学学报》1997年第3期67-69,共3页Acta Scientiarum Naturalium Universitatis Jilinensis

基　　金：国家教委博士点基金

摘　　要：采用微波等离子体化学气相沉积方法分别在CH4／H2，CO／H2和（CH4＋CO）／H2气体体系下合成了金刚石薄膜．结果表明，所合成的金刚石薄膜具有明显的柱状生长特性和较高的品质，（CH4＋CO）／H2体系合成的金刚石薄膜具有较高的生长速率和（100）晶面定向生长的特性．The present paper covers the polycrystalline diamond films deposited on silicon substrate in each of the gaseous systems of CH4/H2, CO/H2 and (CH4+CO)/H2 with the method of microwave plasma CVD. The growth characteristics of the diamond film were studied. The result showed that the diamond film deposited by MWPCVD showed the structure of column and that the system of (CH4+CO)/H2 is of advantage for the deposition of the diamond film with a higher growth rate, (100)grain orientation and higher quality.

关 键 词：金刚石 薄膜 微波等离子体 化学气相沉积 制备 

分 类 号：O484.1[理学—固体物理]