碱性浆料下计算机硬盘NiP基板CMP机理的分析研究  

Analyses and study of CMP mechanism of NiP substrate of computer hard-disk with alkali slurry

作　　者：田军[1] 刘玉岭[1] 王立发[1] 唐文栋[1] 

机构地区：[1]河北工业大学微电子技术与材料研究所,天津300130

出　　处：《功能材料》2007年第A03期1086-1088,共3页Journal of Functional Materials

基　　金：高校博士点基金资助项目（20050080007）;国家自然科学安全联合基金资助项目（10676008）.

摘　　要：通过对镍磷基板的化学性质分析，讨论了其动力学过程，指出化学反应过程是最慢的过程，是CMP的控制过程，分析了浆料在硬盘基板CMP中的重要性，指出浆料的化学成份是化学作用的关键，研制了新型碱性浆料，研究了碱性浆料下镍磷基板CMP机理，通过络合胺化剂的强络合作用实现了碱性浆料下的高凹凸选择性，获得了较高的去除速率；选用小粒径、低硬度的二氧化硅水溶胶磨料实现了较低的表面粗糙度。In this paper, the chemical character of NiP substrate of computer disk is analyzed, the CMP kinetics processing is discussed to indicate that the chemical reaction is the slowest and the control process. By analyzing essentiality of slurry on NiP film CMP, it is indicated that the chemical component of slurry acts the important role in CMP. New type of alkali slurry for NiP substrate was prepared and its CMP mechanism is studied with alkali slurry. Strong complexation of amidocyanogen-complex agent improved selectivity of concave area and convex area to get higher removal rate. Low roughness is realized with small size and low hardness silica sol as abrasive.

关 键 词：硬盘基板 CMP 浆料 机理 去除速率 

分 类 号：TN305.2[电子电信—物理电子学]