AlGaN基共振腔增强的p-i-n型紫外探测器  

An AlGaN-Based Resonant-Cavity-Enhanced p-i-n Ultraviolet Photodetector

作　　者：姬小利[1] 江若琏[1] 周建军[1] 刘斌[1] 谢自力[1] 韩平[1] 张荣[1] 郑有炓[1] 龚海梅[2] 

机构地区：[1]南京大学物理系江苏省光电功能材料重点实验室,南京210093 [2]中国科学院上海技术物理研究所,上海200080

出　　处：《Journal of Semiconductors》2007年第12期1957-1960,共4页半导体学报（英文版）

基　　金：国家重大基础研究(批准号:2006CB6049);国家自然科学基金(批准号:60676057)资助项目~~

摘　　要：设计了目标探测波长为320nm的AlGaN基共振腔增强的p-i-n型紫外光电探测器,共振腔由分别作为底镜和顶镜的AlN/Al0.3Ga0.7 N布拉格反射镜和空气/GaN界面组成,有源区p-GaN/i-GaN/n-Al0.38Ga0.62 N被置于腔内.该结构采用金属有机物化学气相淀积(MOCVD)方法在蓝宝石衬底和GaN模板上外延生长得到.光谱响应测试显示了正入射时该器件在波长313nm处出现响应的选择增强,零偏压下响应度为14mA/W.AlGaN-based resonant-cavity-enhanced p-i-n photodetectors operating at a wavelength of 320nm were designed. A 40.5-pair AIN/Al0.3 Ga0.7N distributed Bragg reflector and the air/GaN interface, serving as the back and front mirror, respectively,form a resonant cavity. In the cavity there is a p-GaN/i-GaN/n-Al0.38Ga0.62N structure. The wafer was fully epitaxial on the sapphire substrate and GaN template by metalorganic chemical vapor deposition. The response spectrum exhibits selective enhancement at 313nm,with a responsivity of 14mA/W under zero bias.

关 键 词：紫外探测器 共振腔增强 AIGAN 分布布拉格反射镜 传递矩阵方法 

分 类 号：TN23[电子电信—物理电子学] O472.8[理学—半导体物理]