云南高校图书馆联盟文献共享服务平台- AIGAN

AIGAN: 作品数：12被引量：15H指数：3; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：龚海梅李向阳张燕黄翌敏冷永清更多>>; 相关机构：中国科学院厦门大学南京大学中国科学院大学更多>>; 相关期刊：《Journal of Semiconductors》《Frontiers of Optoelectronics》《Frontiers of Materials Science》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划上海市自然科学基金更多>>

Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AIGaN underlayer in a 290 nm UV-LED被引量：4: 《Photonics Research》2020年第6期806-811,共6页YUFENG LI CHENYU WANG YE ZHANG PENG HU SHENGNAN ZHANG MENGQI DU XILIN SU QIANG LI FENG YUN; National Natural Science Foundation of China(61574114,61774121);National Key Research and Development Program of China(2016YFB0400801);Fundamental Research Funds for the Central Universities(Z201805198).; A full structure 290 nm ultraviolet light emitting diode(UV-LED)with a nanoporous n-AlGaN underlayer was fabricated by top via hole formation followed by high-voltage electrochemical etching.The 20 to 120 nm nanopores...; 关键词：pores ULTRAVIOLET relaxed

Revealing the surface electronic structures of AIGaN deep-ultraviolet multiple quantum wells with lateral polarity domains被引量：2: 《Photonics Research》2020年第6期812-818,共7页WEI GUO LI CHEN HOUQIANG XU YINGDA QIAN MOHEB SHEIKHI JASON HOO SHIPING GUO LIANG XU JIANZHE LU FERAS ALQATARI XIAOHANG LI KAIYAN HE ZHE CHUAN FENG JICHUN YE; National Key Research;and Development Program of China(2016YFB0400802);National Natural Science Foundation of China(61704176,61974149);Key Research and Development Program of Zhejiang Province(2019C01080,2020C01145);Ningbo Innovation 2025 Major Project(2018B10088,2019B10121).; We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs)with lateral polarity domains.The localized potential maximum is predicted near the...; 关键词：ULTRAVIOLET electronic QUANTUM

具有低带外响应的640×8元可见盲AIGaN紫外焦平面: 《红外与激光工程》2018年第A01期99-104,共6页马丁许金通刘福浩张燕李向阳; 国家自然科学基金（61106097,61204134,11304335）;上海市自然科学基金（16ZR1441300）; 带外响应是紫外焦平面探测器的一个重要参数。作为一种宽禁带半导体材料，AIGaN基紫外探测器在紫外探测领域中具有十分优秀的带外响应性能及带外抑制能力。报道了一种640×8元可见盲紫外焦平面探测器，其光谱响应范围为345～363．5nm。...; 关键词：带外响应紫外焦平面探测器可见盲

Design and simulation to improve the structural efficiency of green light emission of GaN/InGaN/AIGaN light emitting diode被引量：1: 《Frontiers of Optoelectronics》2017年第4期370-377,共8页Sakhawat HUSSAIN Tasnim ZERIN Md. Ashik KHAN; This study considered the design of an efficient, high brightness polar InGaN/GaN light emitting diode （LED） structure with A1GaN capping layer for green light emission. The deposition of high In （〉 15%） composit...; 关键词：green light emitting diode （LED） latticeparameter oscillator strength InGaN quantum well （QW） A1GaN capping layer

A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT被引量：3: 《Chinese Physics B》2015年第10期438-442,共5页郑佳欣马晓华卢阳赵博超张宏鹤张濛曹梦逸郝跃; Project supported by the National Key Basic Research Program of China(Grant No.2011CBA00606);Program for New Century Excellent Talents in University,China(Grant No.NCET-12-0915);the National Natural Science Foundation of China(Grant No.61334002); A C-band high efficiency and high gain two-stage power amplifier based on A1GaN/GaN high electron mobility transistor （HEMT） is designed and measured in this paper. The input and output impedances for the optimum po...; 关键词：AIGaN/GaN HEMT high power-added efficiency amplifier microwave and millimeterwave de- vices and circuits load pull

Annealing effect on structural and magnetic properties of Tb and Cr co-implanted AIGaN: 《Frontiers of Materials Science》2012年第4期366-370,共5页Chun-Hai YIN Chao LIU Dong-Yan TAO Yi-Ping ZENG; Unintentionally doped AIGaN layers, which were co.implanted with 400 keV Tb＋ ions and 200keV Cr＋ ions at doses of 1.5×1015cm-2, have been rapid thermally annealed at 800℃ and 900℃ for 5 min in flowing N2, Compare...; 关键词：diluted magnetic semiconductor （DMS）. room temperature ferromagne-tism ion implantation ltl-ride thin film

A high-performance enhancement-mode AIGaN/GaN HEMT被引量：1: 《Journal of Semiconductors》2010年第8期45-47,共3页冯志红谢圣银周瑞尹甲运周伟蔡树军; Project supported by the National Natural Science Foundation of China(Nos.60890192,60876009).; An enhancement-mode AlGaN/GaN HEMT with a threshold voltage of 0.35 V was fabricated by fluorine plasma treatment.The enhancement-mode device demonstrates high-performance DC characteristics with a saturation current ...; 关键词：ENHANCEMENT-MODE AlGaN/GaN HEMT fluorine plasma threshold voltage numerical simulation

Open-Gate Undoped-AIGaN-GaN HEMT Structure for pH Sensing Application: 《材料科学与工程（中英文版）》2010年第7期1-6,共6页Sharifabad Maneea Eizadi Zainal Abidin Mastura Shafinaz Mustafa Farahiyah Hashim Abdul Manaf Abd Rahman Shaharin Fadzli Abdul Rahman Abdul Rahim Qindeel Rabia Omar Nurul Afzan; 关键词：HEMT器件 GaN pH值掺杂遥感应用结构 AN型高电子迁移率晶体管

AlGaN基共振腔增强的p-i-n型紫外探测器被引量：1: 《Journal of Semiconductors》2007年第12期1957-1960,共4页姬小利江若琏周建军刘斌谢自力韩平张荣郑有炓龚海梅; 国家重大基础研究(批准号:2006CB6049);国家自然科学基金(批准号:60676057)资助项目~~; 设计了目标探测波长为320nm的AlGaN基共振腔增强的p-i-n型紫外光电探测器,共振腔由分别作为底镜和顶镜的AlN/Al0.3Ga0.7 N布拉格反射镜和空气/GaN界面组成,有源区p-GaN/i-GaN/n-Al0.38Ga0.62 N被置于腔内.该结构采用金属有机物化学气相...; 关键词：紫外探测器共振腔增强 AIGAN 分布布拉格反射镜传递矩阵方法

AIGaN紫外探测器及其应用被引量：3: 《红外与激光工程》2007年第z1期209-213,共5页黄翌敏李向阳龚海梅; AlGa基紫外探测器具有量子效率高,工作电压低并能够通过调节组分改变相应波段,在用于多光谱成像时能减少滤光片的使用,提高系统效率,因此成为国内外研究的热点.介绍了AlGaN紫外探测器的发展现状,并以国产AIGaN日盲/可见盲双波段探测器...; 关键词：铝镓氮紫外探测器多光谱成像

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