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作 者:张秋霞[1] 李玉国[1] 王建波[1] 张敬尧[1] 崔传文[1] 张月甫[1]
机构地区:[1]山东师范大学物理与电子科学学院半导体研究所,济南250014
出 处:《微纳电子技术》2007年第12期1059-1062,共4页Micronanoelectronic Technology
摘 要:室温下用磁控溅射法在Si(111)衬底上生成Au/SiO2复合纳米颗粒膜。用扫描电子显微镜(SEM)和X射线衍射方法(XRD)对不同温度退火后的Au/SiO2复合薄膜的表面形貌、微观结构进行了表征。SEM结果表明,随着退火温度升高,Au纳米颗粒先形成大的聚集后出现分布均匀的超微颗粒。XRD结果显示700℃时Au的衍射峰最强,随后峰强有所减弱,这与SEM检测结果相吻合。另外实验结果证实在1000℃退火时自组装生成空间分布均匀(直径约为70nm)的Au纳米点,可以用来作为生长一维纳米材料的模板。Au/SiO2 composite nanoparticle films were prepared on S i(111) substrates by magnetron sputtering at room temperature. The microstructure and the surface morphology of Au/SiO2 composite films annealed at different temperatures were characterized through scanning electron microscope (SEM) and X-ray diffraction (XRD) SEM results demonstrate that with increasing annealing temperature, the large agglomeration of Au nanoparticles form first, and then ultramicro nanoparticles appear. XRD results show that the strongest diffraction intensity of Au peaks occurs at 700 ℃, and then becomes weaker, which is consistent with SEM results. In addition, experimental results indicate that Au nanodots of about 70 nm in diameter, which can self-assemble and become well-distributed in space at the annealing temperature of 1 000℃, can be used as the template to prepare one-dimensional nanomaterials.
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