微波GaAs FET放大电路灾变现象的仿真研究  

Simulation and study on the failure phenomenon of microwave GaAsFET amplifying circuit

作　　者：穆玉珠[1] 黄卡玛[2] 

机构地区：[1]西南民族大学,四川成都610041 [2]四川大学,四川成都610064

出　　处：《西南民族大学学报（自然科学版）》2007年第4期846-848,共3页Journal of Southwest Minzu University(Natural Science Edition)

摘　　要：任何含有有源器件的微波放大电路在一定情况下都会表现出非线性特性,同时GaAsFET自身存在的内部反馈和电路元器件的电磁辐射可能会导致信号的正反馈,从而引起放大电路的灾变.本文采用GaAsFET的Curtice-3大信号模型,应用电路定律建立微波放大电路的状态方程,并在时域中用龙格-库塔法求解.最后编程模拟了正反馈情况下电路的灾变现象.Under certain circumstances, any microwave amplifier.circuit including active components will express the nonlinear characteristic. If the inner feedback of GaAsFET or the electromagnetic radiation of the components in circuit leads to positi＇ve feedback of signal, the self-oscillation phenomenon will happen. Even the worse, the circuit failure may occur. Adopting the Curtice-3 large signal model of Ga：As FET, the state equations of the circuit are built based on the Kirchhoff＇s law, and calculated by the aid of R-K method. Finally, supposing that the positive feedback exists, the self-excitation and failure phenomenon of the circuit are simulated by programming.

关 键 词：GAASFET 非线性 Curtice-3 龙格-库塔法 正反馈 灾变 

分 类 号：TN72[电子电信—电路与系统]