用热丝法制备优质稳定非晶硅薄膜的研究  

HIGH QUALITY AMORPHOUS SILICON FILMS FABRICATION BY HOT WIRE CHEMICAL VAPOUR DEPOSITION TECHNIQUE

作　　者：陈国[1] 朱美芳[1] 孙景兰 郭晓旭[1] 苏夷希 

机构地区：[1]中国科技大学研究生院物理系

出　　处：《太阳能学报》1997年第3期269-272,共4页Acta Energiae Solaris Sinica

摘　　要：系统地研究了低压热丝化学汽相沉积技术中沉积气压、衬底温度、钨丝温度等参量对氢化非晶硅膜结构、光电特性及稳定性的影响。结果表明，沉积气压是影响非晶硅膜的最主要参数，在优化沉积参数的条件下制备非晶硅。The effects of deposition pressure P g,substrate temperature T s,filament temperature T f on the properties and structure of a Si∶H film prepared by the hot wire chemical vapor deposition (HWCVD) technique have been systematically studied.The results show that the deposition pressure is the most significant parameter.The stability was signficantly improved by using optimized parameters.

关 键 词：热丝法 稳定性 太阳能电池 非晶硅薄膜 

分 类 号：TM914.42[电气工程—电力电子与电力传动] TN304.12[电子电信—物理电子学]