表面处理与离子注入对GaN HEMT肖特基特性的影响  

Effects of Surface Treatment and Ion Implantation on Schottky Characteristics of GaN HEMT

作　　者：宋建博[1] 杨瑞霞[1] 张志国[2] 王勇[2] 冯震[2] 冯志宏[2] 杨克武[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所

出　　处：《半导体技术》2008年第1期59-61,共3页Semiconductor Technology

基　　金：河北省自然科学基金资助项目(2007000098);天津市自然科学基金资助项目(07JCZDJC06100)

摘　　要：研究了不同的表面处理方法及离子注入对AlGaN/GaN HEMT肖特基特性的影响。在栅金属化前,采用不同的表面处理方法进行实验,发现通过表面处理,栅肖特基特性得到一定的改善,但还不能从根本上解决漏电大、理想因子偏高的问题。进一步实验发现,硼离子注入才是导致栅肖特基特性变差的主要因素,通过对离子注入的优化,器件栅金属化后的理想因子减小到1.6,栅源反向电压为-20 V时,反向泄漏电流为2.8×10-6A。Effects of different surface treatment methods and ion implantation on Schottky characteristics of AlGaN/GaN HEMT were studied. Before gate metallization, experiment were made through different surface treatment methods and results show that the Schottky characteristics can be improved, but reverse leakage current and ideal factor can not be obtained fundamentally. Further study indicates that the implantation of B ＋ is the main cause as Schottky characteristics becoming worse. Through optimizing ion implantation process, the ideal factor decreases to 1.6 and the reverse current leakage is 2.8 × 10^-6 A when the reverse voltage is -20 V.

关 键 词：表面处理 离子注入 泄漏电流 理想因子 肖特基特性 

分 类 号：TN386.3[电子电信—物理电子学]