GaN材料生长研究  

Study on Growth of GaN Material

作　　者：章其麟[1] 孙文红[1] 刘燕飞[1] 毕书亮 耿金花[1] 秦国刚[2] 

机构地区：[1]电子工业部第十三研究所 [2]北京大学物理系

出　　处：《半导体情报》1997年第5期6-9,共4页Semiconductor Information

摘　　要：用常压ＭＯＣＶＤ方法我们在蓝宝石（０００１）、Ｓｉ（１１１）衬底上，成功地制备出ＧａＮ单晶薄膜材料，取得了ＧａＮ材料的初步测试结果。纯度ＧａＮ为ｎ型，载流子浓度为１０１７～１０１８ｃｍ－３，迁移率为２００～３５０ｃｍ２／Ｖ·ｓ，双晶衍射半峰宽为７′，室温ＰＬ光谱本征发光波长为３７０ｎｍ，并首次观察到掺ＺｎＧａＮ呈ｐ型电导。The single crystal GaN films were prepared by APMOCVD on sappier(0001)and Si(111)substrates.They exhibited n type intrinsic conduction,their concentration,Hall mobility and FWHM of double crystal diffraction were 10 17 ～10 18 cm 3,200～350cm 2/V·s and 7′.respectively.The RT PL spectra result of pure GaN showed that there was a band edge peak at 370nm,It is the first time that we have observed the p type conduct of Zn doped GaN material.

关 键 词：氮化镓 发光二极管 外延生长 

分 类 号：TN304.23[电子电信—物理电子学] TN304.054