GaN材料的GSMBE生长  

Growth of GaN by GSMBE

作　　者：王晓亮[1] 孙殿照[1] 李晓兵[1] 黄运衡[1] 朱世荣[1] 曾一平[1] 李晋闽[1] 孔梅影[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所材料中心,北京100083

出　　处：《高技术通讯》1997年第3期1-3,共3页Chinese High Technology Letters

基　　金：863计划资助

摘　　要：在国内首次用NH3作氮源的GSMB方法在α－Al2O3衬底上生长出了GaN单晶外延膜。GaN生长速率可达0．5μm／h。GaN外延膜的（0002）双晶X射线衍射峰回摆曲线的半高宽最窄为8arcmin，霍尔迁移率为50cm2／V．s。对质量好的GaN膜，室温阴极发光谱上只有一个强而锐的近带边发光峰，谱峰位于372nm处，谱峰半高宽为14nm（125meV）。Gallium nitride single crystalline epitaxial layer has been achieved on (0001) sapphire substrate by GSMBE using amonia as nitrogen source for the first time in China. The growth rate of gallium nitride is as high as 0. 5μm/h. The narrowest full width at half maximum (FWHM) of the (0002) double crystal xray diffraction rocking curve is 8 arcmin.. The Hall mobility of good samples is about 50 cm2/V. s. On the cathodolumenescence spectrum at room temperature, only the near band emission peaked at 372nm can be observed with a FWHM of 14nm (125meV).

关 键 词：氮化镓 分子束外延 蓝宝石 半导体 外延生长 

分 类 号：TN304.23[电子电信—物理电子学]