掺氮类金刚石薄膜的制备及其结构表征  

Preparation of DLC:N thin films and their structure characterization

作　　者：王淑占[1] 李合琴[1] 巫邵波[1] 赵之明[1] 宋泽润[2] 

机构地区：[1]合肥工业大学材料科学与工程学院,安徽合肥230009 [2]中国电子科技集团公司43研究所,安徽合肥230022

出　　处：《真空》2008年第1期64-67,共4页Vacuum

基　　金：安徽省自然科学基金(03044703);安徽省红外与低温等离子体重点实验室资助(2007C002107D)

摘　　要：采用射频磁控反应溅射法,Ar气为溅射气体,N2气为反应气体,用高纯石墨靶在Si(100)片上制备了掺氮类金刚石薄膜,采用X射线光电子能谱(XPS)、拉曼光谱(Raman)、扫描电子显微镜(SEM),表征了掺氮类金刚石薄膜的微观结构、表面及截面形貌。Raman光谱结果表明,制备的掺氮类金刚石薄膜中含有特征峰D峰和G峰,分别位于1339.2 cm-1、1554.6 cm-1均向低波数段频移,具有典型的类金刚石结构特征;XPS光谱的C1s和N1s的芯能级证实了薄膜中的碳氮进行了化合,形成了C—N、C=N、C≡N,说明薄膜中形成了非晶碳氮结构;同时SEM结果表明实验所制备的薄膜表面均匀、致密、光滑,从截面照片观察,薄膜与衬底结合紧密,薄膜的厚度大约为150nm。DLC：N thin films were deposited on Si （100） wafer substrate by RF reactive magnetron sputtering with a highly pure graphite target, where the gas mixture containing argon and nitrogen was used as sputtering gas. The micro-structure and surface and sectional morphologies of the films were characterized by Raman spectroscopy, XPS and SEM. The Raman spectra indicated that the D and G peaks of DLC：N thin films are near 1339.2cm^-1 and 1554.6cm^-1 and shift slightly to lower wave numbers, which means that the structure of N doped films is still a typical one of DLC. As shown in XPS spectra, the N atoms and C atoms are bonded together in different types of sp^3 C-N, sp2 C=N and C=N by Lorentzian fitting of Cls and Nls. It implies that the amorphous structure of carbon nitride forms in the films. The surface morphology of the films is homogeneous, compact and smooth as shown in SEM images, and the sectional morphology of the films shows that the 150nm- thick film is adhered to substrate tightly.

关 键 词：射频磁控反应溅射 掺氮类金刚石薄膜 拉曼光谱 X射线光电子能谱 扫描电子显微镜 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]