射频磁控反应溅射制备ZnO/AlN双层膜的结构和性能  

STRUCTURE AND PROPERTIES OF ZnO/AlN BILAYERS PREPARED BY RF MAGNETRON REACTIVE SPUTTERING

作　　者：巫邵波[1] 李合琴[1] 王淑占[1] 顾金宝[1] 赵之明[1] 

机构地区：[1]合肥工业大学材料科学与工程学院,合肥230009

出　　处：《理化检验（物理分册）》2008年第2期71-74,93,共5页Physical Testing and Chemical Analysis(Part A:Physical Testing)

基　　金：安徽省自然科学基金(03044703);安徽省红外与低温等离子体重点实验室(2007C002107D)

摘　　要：采用射频磁控反应溅射在Si(100)衬底上制备了ZnO/AlN双层膜。使用X射线衍射仪、原子力显微镜(AFM)、LCR测试仪及荧光分光光度计等仪器对样品进行了结构、表面形貌、导电性及荧光光谱的测试,并与相同工艺下制备的ZnO单层薄膜进行了对比研究。结果表明,ZnO/AlN双层膜的c轴择优取向性优于单层ZnO薄膜,薄膜应力更小,且为压应力,晶粒尺寸大于单层膜,表面粗糙度较小,并且其电阻率更低。荧光光谱显示,ZnO/AlN双层膜的结晶质量更好。ZnO/AlN bilayers were deposited on Si（100） subtrate by RF magnetron reactive sputtering. The structure, surface morphology, electrical resistivities and fluorescence spectrum of the ZnO/AlN bilayers were determined by using XRD, AFM, LCR HITESTER and fluoescence spectromter. Compared with ZnO/Si films prepared by using the same processing parameter, the ZnO/AlN bilayers, with a preferred orientation in c-axis, have a litter membrance stress and root-mean-square roughness, and a lower electrical resistivity. The fluorescence spectrum shows that the crystalline quality of ZnO/AlN bilayers is better than that of ZnO/Si films.

关 键 词：射频磁控反应溅射 缓冲层 表面形貌 电阻率 荧光光谱 

分 类 号：TB43[一般工业技术]