全耗尽型浮空埋层LDMOS的耐压特性  

Breakdown Voltage Characteristics of LDMOS with a Full Depletion Floating Buried Layer

作　　者：成建兵[1] 张波 李肇基[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2008年第2期344-347,共4页半导体学报（英文版）

基　　金：模拟集成电路国家重点实验室基金(9140C0903010604);国家自然科学基金(批准号:60576052)资助项目~~

摘　　要：提出了一种新的全耗尽型浮空埋层LDMOS(FB-LDMOS)结构.全耗尽n型埋层在器件的体内产生新的电场,该电场调制了漂移区电场,使得在降低漂移区漏端电场的同时提高了源侧和中部电场REBULF效应.分析了埋层的浓度、厚度、长度等对器件击穿电压的影响.借助二维仿真软件MEDICI,该新结构的击穿电压由传统LDMOS的585.8V提高到886.9V,提高了51.4%.A new LDMOS with a full depletion floating buried layer is proposed. Because of the buried layer, a new electric field peak is induced and this new field modulates the field in the drift region. The modulation reduces the field of the drain side, and mean- while,the fields of the source side and the middle of the drift are improved （the REBULF effect）. The influence of the doping, thickness,and length of bury on the breakdown voltage is discussed. 2D numerical simulations using MEDICI show that the breakdown voltage increases from 585.8 to 886.9V.

关 键 词：LDMOS 全耗尽型浮空埋层 RESURF REBULF 击穿电压 

分 类 号：TN386[电子电信—物理电子学]