一种新结构IGBT——内透明集电极IGBT的仿真  

A New Structural IGBT—— an Internal Transparent Collector IGBT and Its Simulation

作　　者：王浩[1] 胡冬青[1] 吴郁[1] 周文定[1] 亢宝位[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《Journal of Semiconductors》2008年第2期348-351,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:60676049)~~

摘　　要：对新近提出的一种新结构的IGBT——内透明集电极IGBT进行了器件性能的仿真.这种IGBT是在传统非透明集电极IGBT结构基础上,通过在集电区内距离集电结很近处设置一个高复合层的方法,使器件在物理上实现了集电极对电子的透明,同时又避免了低压透明集电极IGBT制造过程中超薄片操作的技术难题.对器件的温度特性和关断特性进行了仿真研究,并与现行PT-IGBT和FS-IGBT进行了比较.仿真结果表明,通过合理调整内透明集电极IGBT的参数组合,可以使其在具有通态压降正温度系数的同时,又具有较快的关断速度,实现透明集电极IGBT的优良性能.The performance of a new structural IGBT-- an internal transparent collector IGBT （ITC-IGBT） that is proposed recently is simulated. On the foundation of the traditional non-transparent collector IGBT structure,a local high recombination region where the carriers＇ lifetime is low enough is introduced just below the collector in the collector region. In this way, a transparent collector is realized in this IGBT. Meanwhile, the technical problem of ultra thin wafer processing during the manufacturing of low voltage transparent collector IGBTs is also avoided. We emphasize the simulation of the temperature and turn-off characteristics of the device ,and compare it with the existing PT-IGBT and FS-IGBT. The results demonstrate that by properly coordinating the configuration of the parameters,not only does the internal transparent collector IGBT boast a positive temperature coefficient of saturation voltage,it also possesses a fast turn-off speed,indicating the excellent performance of the transparent collector IGBT.

关 键 词：内透明集电极 PT-IGBT NPT-IGBT 高复合层 

分 类 号：TN386[电子电信—物理电子学]