HfO2薄膜反应磁控溅射沉积工艺的研究  

Study of the Deposition of HfO_2 Thin Films by Reactive Magnetron Sputtering Process

作　　者：贺琦[1] 王宏斌[2] 张树玉[2] 吕反修[1] 杨海[2] 苏小平[2] 

机构地区：[1]北京科技大学材料科学与工程学院 [2]北京有色金属研究总院,北京100088

出　　处：《人工晶体学报》2008年第1期70-75,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(No.50572007);教育部高等学校博士学科点专项科研基金(No.20040008018)项目

摘　　要：采用纯铪(Hf)金属靶,在氧和氩反应气氛中进行了HfO2薄膜反应磁控溅射沉积,研究了电源功率、O2/Ar比例和工作气压对薄膜组成及薄膜沉积过程的影响。对制备的HfO2薄膜进行了退火处理,利用X射线衍射仪(GIXRD)、红外波谱仪(FT-IR)和场发射扫描电子显微镜(FE-SEM)表征了退火前后HfO2薄膜的显微结构、组织组成及红外透过性能。采用胶带测试测定了HfO2薄膜的附着性能。本研究得到了优化的沉积工艺参数。Hafnium dioxide （HfO2） thin films were prepared by reactive magnetron sputtering with high purity Hf target in Ar/O2 mixtures. The effect of parameters, such as, target input power, Ar/O2, working pressure and distance of target-substrate, on the deposition were studied. Post deposition annealing was conducted on as-deposited HfO2 thin films. The microstructure, infrared transmittance and phases of as-deposited and annealed HfO2 thin films were characterized. Adhesion of HfO2 thin films on substrates was tested by tape-test method. The optimized expermental parameters were obtained in our depositon system.

关 键 词：HFO2薄膜 反应磁控溅射沉积 红外透过率 

分 类 号：O78[理学—晶体学]