CMP专用大粒径硅溶胶研磨料生长及控制机理  

Growth and Control Mechanism of Silica Sol Nano-Abrasive with Large-Particle for CMP Slurry

作　　者：张建新[1] 刘玉岭[1] 张楷亮[2] 檀柏梅[1] 牛新环[1] 王娟[1] 

机构地区：[1]河北工业大学微电子研究所,天津300130 [2]天津理工大学电子信息与通信工程学院,天津300191

出　　处：《纳米技术与精密工程》2008年第2期103-107,共5页Nanotechnology and Precision Engineering

基　　金：天津市自然科学基金科技发展计划项目(043801211)

摘　　要：为满足甚大规模集成电路(ULSI)互连结构高质量、高效率化学机械抛光(CMP)的要求,以LaMer模型为理论指导,对恒液面聚合生长法制备大粒径、低分散度硅溶胶研磨料的粒径增长阶段进行了机理分析,并讨论了加料速率对平均粒径及分散度的影响;优化加料速率为3.6 mL/min,以此控制体系中硅酸浓度的变化趋势,避免产生两种类型的新晶核,实现了单纯的粒径增长.以胶粒平均粒径28 nm、分散度1.13的母液制备出粒径57 nm、分散度1.07的硅溶胶.通过工艺调整并按照分级生长模式,进一步制得符合高质量、高效率CMP专用的大粒径(平均粒径为112 nm)、低分散度(接近于1.00)硅溶胶研磨料.For high-quality and high-efficiency chemical mechanical polishing （CMP） of multilayer interconnection in ultralarge-scale integrated （ULSI） circuit, the silica sol nano-abrasive with large-particle and lowpolydispersition was prepared by polymerization growth technique with control of constant liquid level. According to LaMer model, the feed rates were used to control the changing trends of silicic acid concentration in reaction solution. The analytical results show that the feed rate of 3.6 mL/min can avoid the formation of two types of new nuclei, and achieve pure growth of particles. The nuclei in mother liquor, with average particlesize of 28 nm and polydispersition of 1.13, grow up to the silica sol with average particle-size of 57 nm and lower polydispersition of 1.07. Through adjusted process and classified growth mode, the final particle-size is 112 nm, and the polydispersition is close to 1.00.

关 键 词：硅溶胶 大粒径 生长机理 甚大规模集成电路 化学机械抛光 

分 类 号：TN304[电子电信—物理电子学]