一种N沟VDMOS电离辐射界面陷阱电流传导性研究  

Study of conductive property for a N-VDMOS interface trap under X-ray radiation

作　　者：谭开洲[1] 胡刚毅[2] 杨谟华[1] 徐世六[3] 张正璠[3] 刘玉奎[3] 何开全[2] 钟怡[3] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054 [2]中国电子科技集团公司第二十四研究所,重庆400060 [3]模拟集成电路国家重点实验室,重庆400060

出　　处：《物理学报》2008年第3期1872-1877,共6页Acta Physica Sinica

基　　金：国防预研究基金(批准号:41308020413)资助的课题~~

摘　　要：利用X射线对一种N沟VDMOS在不同的负载功率下进行了辐射试验,采用电流-电压(I-V)测试方法发现这种H2-O2(氢氧合成)氧化栅介质VDMOS样品存在自退火效应时,新增界面陷阱特性与通常的理论不能够很好地一致.根据所测数据,明确提出了有自退火效应样品的新增界面陷阱除了电荷效应外还具有传导电流能力的观点,初步认为该电流是表面费米能级和陷阱能级相互作用导致的产生复合电流,该电流不能简单地从I-V曲线上定量分辨出来.An N-channel VDMOS I- V curve is measured after X-ray radiation under condition of different power dissipation. It is found that the property of new interface traps induced by X-ray radiation of self-annealing VDMOS sample does not conform to existing theory reasonably well. Based on measured data, we advance the viewpoint that the interface trap has current conductive property besides being charged up, and the conduction is assumed to be the generation or recombination current caused by new interface traps, which can not be simply identified quantitatively from the I-V curve.

关 键 词：界面陷阱 亚阈值电流 X射线辐射 电离辐射 N沟VDMOS 

分 类 号：TN386[电子电信—物理电子学]