MBE自组织生长多层竖直自对准InAs量子点结构的研究  

THE INVESTIGATION ON THE MULTILAYER VERTICAL ALIGNED InAs QUANTUM DOTS GROWN BY MBE

作　　者：朱东海[1] 范缇文[1] 梁基本[1] 徐波 朱战萍[1] 龚谦[1] 江潮[1] 李含轩 周伟[1] 王占国[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《发光学报》1997年第3期228-231,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金

摘　　要：利用ＭＢＥ方法在（００１）ＧａＡｓ衬底上生长了多层竖直自对准ＩｎＡｓ量子点结构．透射电子显微镜的观察表明，多层量子点成一系列柱状分布．同单层量子点相比，多层量子点的光荧光谱线发生红移．这表明由于量子点中载流子波函数的扩展和交迭，柱中量子点之间有耦合现象发生．Multilayer InAs quantum dots (QD) have been grown by MBE on (001) GaAs substrates. TEM observation shows several vertical aligned InAs dot columns. Compared with single InAs QD layer structure, the red shift of the PL wavelength is found for multilayer InAs QD layer structure, which indicate the coupling effect in quantum dots located in the columns. The anomalous decrease of FWHM is attributed to the carrier tunneling between nearby columns.

关 键 词：量子点 分子束外延 自组织生长 砷化铟 

分 类 号：TN304.23[电子电信—物理电子学] TN304.05