PECVD法制备硅基ZnO薄膜光学性能的研究  

Optical Property of ZnO Films Grown on Si Substrate by Plasma Enhanced Chemical Vapor Deposition

作　　者：王应民[1] 杜楠[1] 蔡莉[1] 李禾[1] 程国安[2] 

机构地区：[1]南昌航空大学材料科学与工程学院 [2]北京师范大学材料系,北京100871

出　　处：《材料工程》2007年第11期71-75,共5页Journal of Materials Engineering

基　　金：江西省材料中心基金(ZX200401007);南昌航空大学博士科研启动基金(EA200601184);江西省教育厅科技项目(DB200501107)资助

摘　　要：使用薄膜分析系统研究在不同衬底温度下生长的硅基ZnO薄膜反射谱,了解衬底温度对薄膜的结晶状况影响。研究结果表明,随衬底温度的升高,晶粒之间融合长大,薄膜的折射率增大;在衬底温度450℃时生长的ZnO薄膜,薄膜的折射率最大为4.2,反射谱的吸收边更接近380nm,在520nm处有一个弱的吸收峰,与ZnO薄膜的PL谱测试结果一致。再升高衬底温度,晶粒会出现异常长大,晶粒排布将受到影响,导致薄膜折射率下降。Reflection spectra of ZnO thin films grown at the different temperature by plasma enhanced chemical vapor deposition（PECVD） are investigated by Aquila 7000 films analysis system.The results show that growth temperature plays an important role to crystallographic properties of ZnO thin films.With increasing growth temperature,grains begin merge and grow up,the refractive index of ZnO thin films increase.When growth temperature reaches the temperature of 450℃,the maximum refractive index of ZnO thin films is 4.2,the absorption edge is around 380 nm,and the other absorption peak is observed at 520 nm.the location absorption peaks are conformity with the results of PL spectra of ZnO thin films,but growth temperature surpass 450℃,the quality of ZnO films become worse,refractive index of ZnO thin films decreases.

关 键 词：SI(111) ZNO薄膜 等离子增强化学气相沉积 反射光谱 

分 类 号：O472.3[理学—半导体物理]