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作 者:李合琴[1] 何晓雄[1] 王淑占[1] 巫邵波[1] 赵之明[1]
机构地区:[1]合肥工业大学材料科学与工程学院,合肥230009
出 处:《真空科学与技术学报》2008年第3期225-229,共5页Chinese Journal of Vacuum Science and Technology
基 金:安徽省自然科学基金(No.03044703);安徽省红外与低温等离子体重点实验室资助(No.2007C002107D)
摘 要:本文利用射频磁控溅射法,以高纯N2、Ar混合气体为溅射气体,用高纯石墨靶在Si(100)基片上制备出掺氮的类金刚石薄膜(DLC∶N)。拉曼光谱(Raman)测试表明该薄膜仍然是类金刚石结构,对其进行拟合后得两个特征峰,分别是在1342.9 cm-1的D峰和1555.3 cm-1的G峰,ID/IG=0.45;X射线光电子能谱(XPS)表明薄膜含氮量为24%,XPS光谱的C1s和N1s的芯能级证实了薄膜中的碳氮进行了化合,形成了C-N、C=N、C≡N,说明薄膜中形成了非晶碳氮结构;傅里叶变换红外透射光谱(FTIR)也表明了薄膜中碳氮进行了化合;扫描电子显微镜(SEM)结果表明,实验所制备的薄膜表面均匀、致密、光滑,从横截面图像观察,薄膜与衬底结合紧密,薄膜的厚度大约为150 nm。Nitrogen doped,diamond-like carbon(DLC) films were grown by radio frequency(RF) magnetron sputtering of high purity graphite target, on Si(100) substrates. The microstructures and surface electronic properties of the DLC :N films were characterized with scanning electron microscopy(SEM), Raman spectroscopy, X-ray photoelectron spec- troscopy(XPS) ,and Fourier transform infrared spectroscopy(FTIR).The results show that the fairly smooth compact film is identified to be the diamond-like carbon film with N concentration of 24%. Formation of C-N, C = N,and C≡N in the reaction of carbon and nitrogen, and strong adhesion at the interface of DLC : N films and silicon substrate, were clearly observed. Possible mechanisms were also tentatively discussed.
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