SiC化学机械抛光技术的研究进展  

Research Progress of SiC CMP

作　　者：李响[1] 杨洪星[1] 于妍[1] 许德洪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2008年第6期470-472,共3页Semiconductor Technology

摘　　要：介绍了半导体材料SiC抛光技术的发展及直接影响器件成品率的衬底材料几何参数和表面质量因素。讨论了SiC化学机械抛光方法(CMP),包括磨削、粗抛和精抛三个过程,其中粗抛又分重压和轻压两个过程,通过这种方法能够制造出平整度好,表面低损伤的SiC晶片的抛光片,切割线痕通过磨削和抛光可以有效地去除,最终达到表面粗糙度小于1 nm。分析了CMP的原理和相关工艺参数对抛光的影响,指出了其发展前景。The development of SiC polishing technology, the geometry parameter and surface quality of SiC wafer which effect on the yield of device are introduced. The means of CMP on SiC are discussed, including grinding, roughness polishing, final polishing, in which roughness polishing was divided into heavy press and light press. It can produce fine SiC wafer with high plane-paralleled and low damage layer surface. Slicing marks can be removed step-by-step by grinding and CMP, the final surface roughness can be less than 1 nm. The theory of CMP and the influence of technical parameters are introduced, and the future development is given.

关 键 词：抛光液 化学机械抛光 纳米粗糙度 平行度 

分 类 号：TN305.2[电子电信—物理电子学]